BF1102 NXP Semiconductors, BF1102 Datasheet - Page 10

• Manufacturer Part Number: BF1102
• Description: Enhancement type Field-Effect Transistor in a plastic SOT363 package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 1 Scattering parameters: V
Table 2 Noise data: V
2000 Apr 11
(MHz)
1000
100
200
300
400
500
600
700
800
900
Dual N-channel dual gate MOS-FETs
50
f
(MHz)
MAGNITUDE
800
f
(ratio)
0.987
0.981
0.961
0.933
0.899
0.867
0.834
0.805
0.779
0.758
0.740
s
11
DS
= 5 V; V
ANGLE
21.9
(deg)
11.1
32.1
42.0
51.1
59.9
67.9
75.7
82.1
89.0
5.6
G2-S
DS
(dB)
F
= 5 V; V
MAGNITUDE
min
2
= 4 V; I
(ratio)
4.069
4.042
3.926
3.778
3.593
3.412
3.216
3.010
2.804
2.656
2.509
G2-S
D
= 15 mA; T
s
21
= 4 V; I
ANGLE
(deg)
173.5
167.0
154.4
142.4
130.6
119.6
109.2
99.0
89.2
80.3
69.9
D
10
amb
= 15 mA; T
(ratio)
0.621
= 25 C
MAGNITUDE
(ratio)
0.001
0.002
0.005
0.006
0.007
0.007
0.007
0.006
0.007
0.007
0.009

amb
opt
= 25 C
s
12
(deg)
61.61
ANGLE
120.7
125.5
(deg)
95.4
81.3
75.8
69.6
65.6
64.4
67.5
78.7
92.7
BF1102; BF1102R
MAGNITUDE
(ratio)
0.986
0.983
0.976
0.960
0.945
0.928
0.914
0.901
0.886
0.889
0.890
Product specification
25.85
s
()
R
22
n
ANGLE
(deg)
12.0
17.7
23.2
29.1
34.1
39.8
45.1
49.7
55.7
3.0
6.0