MX0912B351Y NXP Semiconductors, MX0912B351Y Datasheet - Page 2

• Manufacturer Part Number: MX0912B351Y
• Description: NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
Intended for use in common base class C broadband
pulse power amplifier from 960 to 1215 MHz for TACAN
application.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT439A metal ceramic flange package, with base
connected to flange. It is mounted in common base
configuration and specified in class C.
QUICK REFERENCE DATA
Microwave performance up to T
1997 Feb 19
Class C
t
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
p
Interdigitated structure; high emitter efficiency
Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
Gold metallization realizes very stable characteristics
and excellent lifetime
Multicell geometry gives good balance of dissipated
power and low thermal resistance
Input and output matching cell allows an easier design
of circuits.
NPN microwave power transistor
= 10 s;
OPERATION
MODE OF
= 10%
0.960 to 1.215
(GHz)
f
mb
= 25 C in a common base class C broadband amplifier.
V
(V)
50
CC
WARNING
>325
2
(W)
P
olumns
PINNING - SOT439A
L
3
PIN
Top view
1
2
3
Fig.1 Simplified outline and symbol.
(dB)
G
>7
po
collector
emitter
base connected to flange
1
2
>40
(%)
C
DESCRIPTION
MX0912B351Y
3
Product specification
see Figs 7 and 8
MAM045
b
Z
( )
i
/Z
L
c
e