BLS6G3135S-20 NXP Semiconductors, BLS6G3135S-20 Datasheet - Page 2
![20 W LDMOS power transistor intended for radar applications in the 3](/photos/41/53/415363/sot608b_3d_sml.gif)
BLS6G3135S-20
Manufacturer Part Number
BLS6G3135S-20
Description
20 W LDMOS power transistor intended for radar applications in the 3
Manufacturer
NXP Semiconductors
Datasheet
1.BLS6G3135S-20.pdf
(12 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLS6G3135S-20
Manufacturer:
NXP
Quantity:
1 000
Company:
Part Number:
BLS6G3135S-20
Manufacturer:
M/A-COM
Quantity:
5 000
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLS6G3135-20_6G3135S-20_3
Product data sheet
1.3 Applications
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLS6G3135-20 (SOT608A)
1
2
3
BLS6G3135S-20 (SOT608B)
1
2
3
Type number
BLS6G3135-20
BLS6G3135S-20 -
Symbol
V
V
I
T
T
D
stg
j
DS
GS
S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency
range
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
drain
gate
source
Package
Name
-
BLS6G3135-20; BLS6G3135S-20
Rev. 03 — 3 March 2009
Description
flanged ceramic package; 2 mounting holes; 2 leads
ceramic earless flanged package; 2 leads
Conditions
[1]
[1]
LDMOS S-Band radar power transistor
Simplified outline
2
1
2
1
3
3
Min
-
-
-
0.5
65
Graphic symbol
© NXP B.V. 2009. All rights reserved.
Max
60
+13
2.1
+150
225
2
2
sym112
sym112
Version
SOT608A
SOT608B
1
3
1
3
Unit
V
V
A
C
C
2 of 12