BLF888AS NXP Semiconductors, BLF888AS Datasheet - Page 2

• Manufacturer Part Number: BLF888AS
• Description: A 600W LDMOS RF power transistor for DVB-T applications optimised to give most rugged performance with no compromise in broadband efficiency and gain
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF888A_BLF888AS
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF888A (SOT539A)
1
2
3
4
5
BLF888AS (SOT539B)
1
2
3
4
5
Type number
Symbol
V
T
BLF888A
BLF888AS
V
T
stg
j
DS
GS
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
drain1
drain2
gate1
gate2
source
drain1
drain2
gate1
gate2
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name
-
-
Rev. 3 — 30 August 2011
Description
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
earless flanged balanced LDMOST ceramic
package; 4 leads
[1]
[1]
Conditions
BLF888A; BLF888AS
Simplified outline
1
3
1
3
UHF power LDMOS transistor
2
4
2
4
Min
-
0.5
65
-
5
5
Graphic symbol
© NXP B.V. 2011. All rights reserved.
Max
110
+11
+150
200
3
4
3
4
Version
SOT539A
SOT539B
1
2
1
2
sym117
sym117
Unit
V
V
C
C
2 of 17
5
5