BLF884P NXP Semiconductors, BLF884P Datasheet - Page 2

• Manufacturer Part Number: BLF884P
• Description: A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF884P_BLF884PS
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF884P (SOT1121A)
1
2
3
4
5
BLF884PS (SOT1121B)
1
2
3
4
5
Type number
BLF884P
BLF884PS
Symbol
V
V
T
T
stg
j
DS
GS
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Description
drain1
drain2
gate1
gate2
source
drain1
drain2
gate1
gate2
source
All information provided in this document is subject to legal disclaimers.
Package
Name
-
-
Rev. 2 — 16 December 2011
Description
flanged LDMOST ceramic package;
2 mounting holes; 4 leads
earless flanged LDMOST ceramic package;
4 leads
[1]
[1]
Conditions
BLF884P; BLF884PS
Simplified outline
1
3
1
3
UHF power LDMOS transistor
2
4
2
4
5
Min
-
0.5
65
-
5
Graphic symbol
© NXP B.V. 2011. All rights reserved.
200
Max
104
+11
+150
3
4
3
4
Version
SOT1121A
SOT1121B
1
2
1
2
sym117
sym117
Unit
V
V
C
C
2 of 15
5
5