BLF861A NXP Semiconductors, BLF861A Datasheet - Page 4

• Manufacturer Part Number: BLF861A
• Description: Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap
• Manufacturer: NXP Semiconductors

Philips Semiconductors
APPLICATION INFORMATION
RF performance in a common source 860 MHz test circuit. T
Note
1. Sync compression: input sync
Ruggedness in class-AB operation
The BLF861A is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V
The BLF861A is an improved version of the BLF861 on ruggedness and is capable to withstand abrupt source or load
mismatch errors under the nominal power condition.
2001 Feb 09
handbook, halfpage
CW; class-AB
2-tone; class-AB
PAL BG (TV); class-AB
UHF power LDMOS transistor
CW, class-AB operation; V
P
Fig.3
L
= 170 W (total device); T
OPERATION
( )
z i
12
MODE OF
8
4
0
400
Input impedance as a function of frequency
(series components); typical push-pull
values.
500
DS
DS
600
h
= 32 V; f = 860 MHz at rated load power.
= 25 C.
= 32 V; I
f
1
f
(ch 69)
1
(MHz)
= 860.1
860
860
= 860
f
700
DQ
x i
r i
= 1 A;
33%; output sync 27% measured in an 860 MHz test circuit.
800
V
(V)
32
32
32
f (MHz)
DS
MCD871
900
I
(A)
DQ
1
1
1
4
h
(peak sync)
150 (PEP)
= 25 C; R
handbook, halfpage
typ. 170
> 150
150
CW, class-AB operation; V
P
Fig.4
(W)
P
L
L
= 170 W (total device); T
( )
Z L
10
5
0
5
400
Load impedance as a function of frequency
(series components); typical push-pull
values.
th mb-h
typ. 14.5
>13.5
(dB)
500
>14
>14
G
= 0.15 K/W; unless otherwise specified.
p
DS
600
h
= 25 C.
= 32 V; I
>50
>40
>40
(%)
D
R L
X L
700
DQ
= 1 A;
Product specification
(dBc)
d
800
Im
25
BLF861A
f (MHz)
MCD872
900
note 1
(dB)
G
1
p