BLF7G27L-100 NXP Semiconductors, BLF7G27L-100 Datasheet - Page 14
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BLF7G27L-100
Manufacturer Part Number
BLF7G27L-100
Description
100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
Manufacturer
NXP Semiconductors
Datasheet
1.BLF7G27L-100.pdf
(14 pages)
NXP Semiconductors
13. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Ruggedness in class-AB operation . . . . . . . . . 3
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Single carrier IS-95 . . . . . . . . . . . . . . . . . . . . . . 4
Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Single carrier W-CDMA . . . . . . . . . . . . . . . . . . 7
BLF7G27L-100; BLF7G27LS-100
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document identifier: BLF7G27L-100_7G27LS-100
Power LDMOS transistor
Date of release: 22 July 2011
All rights reserved.