BLF7G20LS-90P NXP Semiconductors, BLF7G20LS-90P Datasheet
BLF7G20LS-90P
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BLF7G20LS-90P Summary of contents
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... BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 2 — 20 October 2011 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 1805 MHz to 1880 MHz and 2110 MHz to 2170 MHz. ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin BLF7G20L-90P (SOT1121A BLF7G20LS-90P (SOT1121B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF7G20L-90P BLF7G20LS-90P 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol ...
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... EVM M Mode of operation: CW D BLF7G20L-90P_7G20LS-90P Product data sheet BLF7G20L-90P; BLF7G20LS-90P Thermal characteristics Parameter thermal resistance from junction to case Characteristics C; per section unless otherwise specified. drain-source breakdown voltage gate-source threshold voltage drain leakage current drain cut-off current gate leakage current ...
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... NXP Semiconductors 7.1 Ruggedness in class-AB operation The BLF7G20L-90P and BLF7G20LS-90P are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 1427 MHz. 7.2 One-tone CW Fig 1. One-tone CW power gain and drain efficiency as function of load power; ...
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... 550 mA 1880 MHz Fig 4. GSM EDGE power gain and drain efficiency as function of load power; typical values BLF7G20L-90P_7G20LS-90P Product data sheet BLF7G20L-90P; BLF7G20LS-90P 001aal868 70 η D (%) IMD 60 (dBc ( 1879.95 MHz; ...
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... 600 mA 1880 MHz Fig 7. Single carrier IS-95 power gain and drain efficiency as function of load power; typical values BLF7G20L-90P_7G20LS-90P Product data sheet BLF7G20L-90P; BLF7G20LS-90P 25 EVM (%) 550 mA 1880 MHz ...
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... 600 mA 1880 MHz Fig 10. Single carrier W-CDMA power gain and drain efficiency as function of load power; typical values BLF7G20L-90P_7G20LS-90P Product data sheet BLF7G20L-90P; BLF7G20LS-90P 11 PAR 600 mA 1880 MHz. DS ...
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... Printed-Circuit Board (PCB): Taconic RF35; See Table 8 for a list of components. Fig 12. Component layout for class-AB production test circuit BLF7G20L-90P_7G20LS-90P Product data sheet BLF7G20L-90P; BLF7G20LS-90P List of components Figure 12. Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor ...
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... Impedance information Table 9. Typical values valid for both section in parallel unless otherwise specified. f MHz 1800 1840 1880 Fig 13. Definition of transistor impedance BLF7G20L-90P_7G20LS-90P Product data sheet BLF7G20L-90P; BLF7G20LS-90P Typical impedance Z S 1.0 j3.3 1.2 j3.3 1.1 j3.4 gate Z S All information provided in this document is subject to legal disclaimers. ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1121A Fig 14. Package outline SOT1121A BLF7G20L-90P_7G20LS-90P Product data sheet BLF7G20L-90P; BLF7G20LS-90P ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1121B Fig 15. Package outline SOT1121B BLF7G20L-90P_7G20LS-90P Product data sheet BLF7G20L-90P; BLF7G20LS-90P ...
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... Revision history Table 11. Revision history Document ID BLF7G20L-90P_7G20LS-90P v.2 Modifications: BLF7G20L-90P_7G20LS-90P v.1 BLF7G20L-90P_7G20LS-90P Product data sheet BLF7G20L-90P; BLF7G20LS-90P Abbreviations Description 3rd Generation Partnership Project Continuous Wave Complementary Cumulative Distribution Function Dedicated Physical Channel Enhanced Data rates for GSM Evolution ElectroStatic Discharge Global System for Mobile Communications ...
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... BLF7G20L-90P_7G20LS-90P Product data sheet BLF7G20L-90P; BLF7G20LS-90P [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... For sales office addresses, please send an email to: BLF7G20L-90P_7G20LS-90P Product data sheet BLF7G20L-90P; BLF7G20LS-90P NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Trademarks Contact information Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 BLF7G20L-90P; BLF7G20LS-90P Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved ...