BLF7G20LS-140P NXP Semiconductors, BLF7G20LS-140P Datasheet - Page 7
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BLF7G20LS-140P
Manufacturer Part Number
BLF7G20LS-140P
Description
Manufacturer
NXP Semiconductors
Datasheet
1.BLF7G20LS-140P.pdf
(13 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF7G20LS-140P
Manufacturer:
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Quantity:
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NXP Semiconductors
BLF7G20LS-140P
Product data sheet
Fig 10. Single carrier W-CDMA power gain and drain
(dB)
G
19.5
18.5
17.5
16.5
p
19
18
17
0
V
efficiency as function of load power;
typical values
DS
= 28 V; I
G
η
D
p
20
7.6 Single carrier W-CDMA
7.7 Test circuit
Dq
= 1080 mA; f = 1880 MHz.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
Channel bandwidth is 3.84 MHz.
Table 8.
For test circuit see
[1]
[2]
[3]
Component
C1, C2, C3
C4, C5
C6, C7, C8
C9, C10
C11
R1, R2
40
American Technical Ceramics type 100A or capacitor of same quality.
TDK or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
60
List of components
80
All information provided in this document is subject to legal disclaimers.
001aam408
Figure
P
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
SMD resistor
L
(W)
100
Rev. 2 — 17 August 2010
12.
60
50
40
30
20
10
0
(%)
η
D
Fig 11. Single carrier W-CDMA ACPR at 5 MHz and at
ACPR
(dBc)
−20
−30
−40
−50
−60
−70
0
V
10 MHz as function of load power;
typical values
DS
= 28 V; I
15
BLF7G20LS-140P
Dq
30
= 1080 mA; f = 1880 MHz.
24 pF
4.7 μF
11 pF
Value
10 μF
470 μF; 63 V
12 Ω
45
Power LDMOS transistor
60
ACPR
ACPR
© NXP B.V. 2010. All rights reserved.
001aam409
75
[1]
[2]
[3]
[2]
10M
5M
P
L
(W)
Remarks
Philips 1206
90
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