BLF6G27-75 NXP Semiconductors, BLF6G27-75 Datasheet - Page 8

75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz

BLF6G27-75

Manufacturer Part Number
BLF6G27-75
Description
75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
Manufacturer
NXP Semiconductors
Datasheet

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Part Number
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Part Number:
BLF6G27-75
Manufacturer:
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NXP Semiconductors
8. Test information
BLF6G27-75_6G27LS-75_1
Product data sheet
8.1 Impedance information
8.2 Test circuit
Table 8.
Typical values per section unless otherwise specified.
f
GHz
2.5
2.6
2.7
Fig 15. Definition of transistor impedance
Fig 16. Component layout
C1
BLF6G27-75
INPUT REV2
NXP
Printed-Circuit Board (PCB) material: Taconic RF35 with
See
Typical impedance
Table 9
for list of components.
Rev. 01 — 22 October 2009
BLF6G27-75; BLF6G27LS-75
Z
5.3
8.7
12.2 + j0.4
C5
S
R1
C2
j7.7
j8.7
gate
Z
S
001aaf059
Z
drain
L
WiMAX power LDMOS transistor
r
C3
= 3.5 and thickness = 0.762 mm.
Z
6.0
4.7
3.9
L
C6
R2
j3.3
j2.6
j2.4
B1
BLF6G27-75
OUTPUT REV2
NXP
© NXP B.V. 2009. All rights reserved.
C7
001aak988
C4
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