BLF6G10LS-200RN NXP Semiconductors, BLF6G10LS-200RN Datasheet - Page 4

• Manufacturer Part Number: BLF6G10LS-200RN
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G10-200RN_10LS-200RN_2
Product data sheet
Fig 2.
(dB)
G
p
21
19
17
15
0
V
Two-tone CW power gain and drain efficiency
as function of peak envelope load power;
typical values
DS
= 28 V; I
7.2 One-tone CW
7.3 Two-tone CW
G
η
D
p
Dq
120
= 1400 mA; f = 881 MHz (±100 kHz).
Fig 1.
V
One-tone CW power gain and drain efficiency as function of load power;
typical values
240
DS
= 28 V; I
P
L(PEP)
001aaj416
(W)
Dq
(dB)
Rev. 02 — 21 January 2010
G
= 1400 mA; f = 881 MHz.
360
p
21
19
17
15
60
40
20
0
(%)
0
η
D
40
G
Fig 3.
η
D
p
(dBc)
IMD
−20
−30
−40
−50
−60
80
0
V
Two-tone CW intermodulation distortion as a
function of peak envelope load power; typical
values
DS
BLF6G10(LS)-200RN
= 28 V; I
120
Dq
160
60
= 1400 mA; f = 881 MHz (±100 kHz).
001aaj415
P
L
(W)
200
Power LDMOS transistor
60
40
20
0
(%)
η
120
D
P
L(PEP)
© NXP B.V. 2010. All rights reserved.
001aah520
IMD3
IMD5
IMD7
(W)
180
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