BLF6G10L-40BRN NXP Semiconductors, BLF6G10L-40BRN Datasheet - Page 6

• Manufacturer Part Number: BLF6G10L-40BRN
• Description: 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
8. Test information
BLF6G10L-40BRN
Product data sheet
Fig 6.
C1
C2
The vias can be as a reference to place components.
The above layout shows the test circuit used to measure the devices in production.
See
Component layout
Table 10
C5
8.1 Test circuit
for list of components.
BLF6G10L-40BRN
Output Circuit
RO4350 30 MII
NXP
BLF6G10L-40BRN
Output Circuit
RO4350 30 MII
NXP
Table 10.
See
[1]
[2]
[3]
Component
C1, C2, C3, C4
C5,C6
C7, C8
C9, C10
C11
R1
R2
R3, R4
C7
C8
Murata or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
Philips or resistor of same quality.
Figure 6
List of components
for component layout.
All information provided in this document is subject to legal disclaimers.
R3
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
chip resistor
chip resistor
chip resistor
Rev. 3 — 16 November 2010
R4
R2
R1
BLF6G10L-40BRN
Value
10 μF
47 pF
100 pF
30 pF
470 μF; 63 V
820 Ω
2.2 kΩ
15 Ω
BLF6G10L-40BRN
Output Circuit
RO4350 30 MII
NXP
BLF6G10L-40BRN
Output Circuit
RO4350 30 MII
NXP
Power LDMOS transistor
C9
C10
© NXP B.V. 2010. All rights reserved.
[1]
[2]
[2]
[2]
[3]
[3]
[3]
C3
Remarks
1206
1206
1206
C6
014aab232
C4
C11
+
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