BLF642 NXP Semiconductors, BLF642 Datasheet - Page 9

A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications

BLF642

Manufacturer Part Number
BLF642
Description
A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
10. Abbreviations
11. Revision history
Table 10.
BLF642
Product data sheet
Document ID
BLF642 v.2
Modifications:
BLF642 v.1
Revision history
Release date
20110722
20110308
Table 9.
Acronym
CW
DVB-T
ESD
HF
LDMOS
LDMOST
PAR
RF
VSWR
The status of this data sheet has been changed to Product data sheet
Table 5 on page
Table 6 on page
Section 8.1.3 on page
Section 8.1.4 on page
Section 8.2 on page
Abbreviations
All information provided in this document is subject to legal disclaimers.
2: The value for R
3: Some values have been changed.
Data sheet status
Product data sheet
Objective data sheet
6: Section has been added.
5: Section has been added.
6: Section has been added.
Description
Continuous Waveform
Digital Video Broadcast - Terrestrial
ElectroStatic Discharge
High Frequency
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
Radio Frequency
Voltage Standing-Wave Ratio
Rev. 2 — 22 July 2011
th(j-c)
has been changed.
Change notice
-
-
Broadband power LDMOS transistor
Supersedes
BLF642 v.1
-
© NXP B.V. 2011. All rights reserved.
BLF642
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