BLF578XRS NXP Semiconductors, BLF578XRS Datasheet - Page 8

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band

BLF578XRS

Manufacturer Part Number
BLF578XRS
Description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band
Manufacturer
NXP Semiconductors
Datasheet

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8. Handling information
9. Abbreviations
10. Revision history
Table 9.
BLF578XR_BLF578XRS
Objective data sheet
CAUTION
Document ID
BLF578XR_BLF578XRS v.1 20120130
Revision history
Table 8.
Acronym
CW
DC
ESD
HF
LDMOS
LDMOST
RF
VSWR
XR
Release date
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Abbreviations
All information provided in this document is subject to legal disclaimers.
Description
Continuous Wave
Direct Current
ElectroStatic Discharge
High Frequency
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
Voltage Standing-Wave Ratio
eXtremely Rugged
Rev. 1 — 30 January 2012
Data sheet status
Objective data sheet
BLF578XR; BLF578XRS
Change notice
-
Power LDMOS transistor
Supersedes
-
© NXP B.V. 2012. All rights reserved.
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