BLF578XR NXP Semiconductors, BLF578XR Datasheet - Page 4

• Manufacturer Part Number: BLF578XR
• Description: A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
BLF578XR_BLF578XRS
Objective data sheet
6.1 DC characteristics
6.2 RF characteristics
Table 6.
T
Table 7.
Mode of operation: pulsed RF; t
I
Symbol Parameter
V
V
V
I
I
I
R
C
C
C
Symbol Parameter
G
RL

Dq
DSS
DSX
GSS
j
D
(BR)DSS
GS(th)
GSq
DS(on)
rs
iss
oss
p
= 25
in
= 40 mA; T

C; per section unless otherwise specified.
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage V
drain leakage current
drain cut-off current
gate leakage current
drain-source on-state
resistance
feedback capacitance
input capacitance
output capacitance
power gain
input return loss
drain efficiency
DC characteristics
RF characteristics
case
All information provided in this document is subject to legal disclaimers.
= 25

C; unless otherwise specified; in a class-AB production test circuit.
Rev. 1 — 30 January 2012
p
= 100

s;
BLF578XR; BLF578XRS
Conditions
V
V
V
V
V
V
V
I
V
f = 1 MHz
V
f = 1 MHz
V
f = 1 MHz
Conditions
P
P
P

D
GS
DS
DS
GS
GS
DS
GS
GS
GS
GS
GS
L
L
L
= 20 %; f = 225 MHz; RF performance at V
= 16.66 A
= 1400 W
= 1400 W
= 1400 W
= 10 V; I
= 50 V; I
= 10 V
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
= 0 V; V
= 0 V; V
= 0 V; V
GS(th)
GS(th)
D
DS
DS
DS
DS
D
D
= 2.5 mA
+ 3.75 V;
DS
+ 3.75 V;
= 500 mA
= 20 mA
= 50 V
= 50 V;
= 50 V;
= 50 V;
= 0 V
Power LDMOS transistor
Min
110
1.25
0.8
-
-
-
-
-
-
-
Min
<tbd> 23
<tbd> 17
<tbd> 69
Typ
-
1.7
1.3
-
77
-
0.07
5.5
414
184
Typ
© NXP B.V. 2012. All rights reserved.
Max
-
2.25
1.8
2.8
-
280
-
-
-
-
Max
<tbd> dB
-
-
DS
= 50 V;
4 of 11
Unit
V
V
V
A
A
nA

pF
pF
pF
Unit
dB
%