BLF244 NXP Semiconductors, BLF244 Datasheet - Page 4

• Manufacturer Part Number: BLF244
• Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
V
2003 Oct 13
V
I
I
V
g
R
I
C
C
C
F
j
DSS
GSS
DSX
GS
fs
V
(BR)DSS
GSth
= 25 C unless otherwise specified.
DSon
is
os
rs
VHF power MOS transistor
SYMBOL
GS
group indicator
GROUP
M
C
D
G
H
N
A
B
E
F
K
J
L
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
matched devices
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
noise figure; see Fig.13
MIN.
PARAMETER
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
LIMITS
(V)
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
V
V
V
I
I
I
I
V
V
V
V
I
T
R
D
D
D
D
D
h
GS
GS
GS
GS
GS
GS
GS
th mb-h
= 5 mA; V
= 5 mA; V
= 0.75 A; V
= 0.75 A; V
= 0.5 A; V
= 25 C; f = 175 MHz;
= 0; I
= 0; V
= 20 V; V
= 10 V; V
= 0; V
= 0; V
= 0; V
4
= 0.3 K/W
D
CONDITIONS
DS
DS
DS
DS
GROUP
= 5 mA
DS
DS
DS
= 28 V
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
DS
GS
DS
W
O
Q
R
U
P
S
T
V
X
Y
Z
DS
= 10 V
= 10 V
= 28 V; R1 = 23
= 10 V
= 10 V
= 10 V
= 0
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
65
2
0.6
MIN.
LIMITS
(V)
0.8
5
60
40
4.5
4.3
Product specification
TYP. MAX. UNIT
BLF244
1
1
4.5
100
1.5
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
V
mA
V
mV
S
A
pF
pF
pF
dB
A