BLA1011-200R NXP Semiconductors, BLA1011-200R Datasheet - Page 4

• Manufacturer Part Number: BLA1011-200R
• Description: 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLA1011-200R_1011S-200R_1
Product data sheet
Fig 1.
Fig 3.
(dB)
G
(dB)
G
p
20
15
10
20
16
12
p
5
0
8
4
0
V
δ = 2 %
Power gain and drain efficiency as functions
of load power; typical values
V
Power gain as a function of load power; typical
values
0
0
DS
DS
= 36 V; I
= 36 V; f = 1060 MHz; t
50
50
G
I
p
Dq
Dq
150 mA
= 1.5 A
= 150 mA; f = 1060 MHz; t
100
100
η
D
150
150
p
= 50 μs; δ = 2 %
200
200
All information provided in this document is subject to legal disclaimers.
P
P
mgw033
L
mgw035
L
(W)
(W)
p
BLA1011-200R; BLA1011S-200R
Rev. 01 — 23 February 2010
= 50 μs;
250
250
80
60
40
20
0
(%)
η
D
Fig 2.
Fig 4.
(W)
P
(W)
P
250
L
200
150
100
250
200
150
100
L
50
50
0
0
0
V
δ = 2 %
Load power as a function of drive power;
typical values
V
t
Load power and power gain as functions of
gate-source voltage; typical values
0
p
DS
DS
= 50 μs; δ = 2 %
= 36 V; I
= 36 V; I
1
2
Dq
Dq
= 150 mA; f = 1060 MHz; t
= 150 mA; P
2
G
Avionics LDMOS transistors
p
4
P
L
3
i
= 5.5 W; f = 1060 MHz;
6
© NXP B.V. 2010. All rights reserved.
4
P
V
D
GS
mgw034
mgw036
(W)
p
(V)
= 50 μs;
8
5
20
16
12
8
4
0
(dB)
G
p
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