PSMN2R6-40YS NXP Semiconductors, PSMN2R6-40YS Datasheet - Page 3

• Manufacturer Part Number: PSMN2R6-40YS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN2R6-40YS_1
Product data sheet
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
(A)
I
D
180
160
140
120
100
80
60
40
20
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering
temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
(1)
50
100
Conditions
T
T
V
V
t
T
T
t
V
unclamped; R
p
p
j
j
mb
mb
150
GS
GS
GS
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≥ 25 °C; T
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
T
003aad225
mb
(°C)
200
j
j
Rev. 01 — 23 June 2009
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
GS
= 100 °C; see
= 25 °C; see
= 50 Ω
Figure 2
= 25 °C; I
mb
mb
N-channel LFPAK 40 V 2.8 mΩ standard level MOSFET
= 25 °C; see
= 25 °C
GS
Fig 2.
D
= 20 kΩ
= 100 A; V
P
Figure 1
(%)
der
Figure 1
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
Figure 3
sup
≤ 40 V;
50
PSMN2R6-40YS
100
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2009. All rights reserved.
T
mb
Max
40
40
20
100
100
651
131
175
175
260
100
651
179
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
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