PSMN2R6-30YLC NXP Semiconductors, PSMN2R6-30YLC Datasheet - Page 8

Logic level enhancement mode N-channel MOSFET in LFPAK package

PSMN2R6-30YLC

Manufacturer Part Number
PSMN2R6-30YLC
Description
Logic level enhancement mode N-channel MOSFET in LFPAK package
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
PSMN2R6-30YLC
Product data sheet
Fig 8.
Fig 10. Sub-threshold drain current as a function of
(A)
I
(S )
g
D
10
10
10
10
10
10
160
120
fs
80
40
-1
-2
-3
-4
-5
-6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
0
0
25
1
Min
50
Typ
Max
2
75
N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower
V
All information provided in this document is subject to legal disclaimers.
003a a f 668
003a a f 667
GS
I
D
(V)
(A)
100
3
Rev. 01 — 2 May 2011
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
(A)
GS (th)
(V)
I
D
100
80
60
40
20
3
2
1
0
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics; drain current as a
0
Max (1mA)
Min (5mA)
T
0
1
PSMN2R6-30YLC
j
= 150 °C
I
D
= 5mA
60
2
1mA
T
j
= 25 °C
120
3
© NXP B.V. 2011. All rights reserved.
003a a f 666
003a a f 670
V
T
GS
j
(°C)
(V)
180
4
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