PSMN1R7-60BS NXP Semiconductors, PSMN1R7-60BS Datasheet - Page 8

• Manufacturer Part Number: PSMN1R7-60BS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN1R7-60BS
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
V
(V)
a
GS
2.4
1.6
1.2
0.8
0.4
10
2
0
8
6
4
2
0
-60
of gate-source voltage; typical values
charge; typical values
0
V
DS
= 12V
40
0
48V
30V
60
80
120
120
All information provided in this document is subject to legal disclaimers.
Q
T
003aaf747
003aaf748
j
G
(°C)
(nC)
180
160
Rev. 2 — 29 February 2012
N-channel 60 V 2 mΩ standard level MOSFET in D2PAK
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
10
5
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
PSMN1R7-60BS
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2012. All rights reserved.
V
003aaa508
003aaf749
DS
(V)
C
C
C
iss
oss
rss
10
2
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