PSMN027-100BS NXP Semiconductors, PSMN027-100BS Datasheet - Page 7

Standard level N-channel MOSFET in D2PAK package qualified to 175C

PSMN027-100BS

Manufacturer Part Number
PSMN027-100BS
Description
Standard level N-channel MOSFET in D2PAK package qualified to 175C
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
PSMN027-100BS
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(A)
I
10
10
10
10
10
10
(A)
D
I
D
40
30
20
10
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
0
0
0.5
10
2
min
1
5.5
typ
4
V
GS
1.5
max
V
(V) = 4 V
All information provided in this document is subject to legal disclaimers.
GS
5
003aae044
V
DS
(V)
03aa35
4.5
(V)
2
6
Rev. 2 — 1 March 2012
N-channel 100V 26.8 mΩ standard level MOSFET in D2PAK.
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
3.2
2.4
1.6
0.8
5
4
3
2
1
0
0
−60
-60
junction temperature
factor as a function of junction temperature
0
0
PSMN027-100BS
60
60
max
min
typ
120
120
© NXP B.V. 2012. All rights reserved.
003aad774
003aad280
T
T
j
j
(°C)
(°C)
180
180
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