PSMN013-100XS NXP Semiconductors, PSMN013-100XS Datasheet - Page 7

• Manufacturer Part Number: PSMN013-100XS
• Description: Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 7.
PSMN013-100XS
Preliminary data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 6.
Fig 8.
SD
r
(A)
(S)
g
I
D
100
fs
120
100
80
60
40
20
80
60
40
20
0
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics; drain current as a
Forward transconductance as a function of
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
V
GS
(V) = 10
20
1
…continued
6.0
40
2
5.5
60
3
N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A)
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003aag606
003aag608
V
I
DS
D
(A)
(V)
5.0
4.8
4.6
4.4
4.2
Conditions
I
see
I
V
Rev. 1 — 13 December 2011
S
S
GS
80
4
= 10 A; V
= 10 A; dI
Figure 18
= 0 V; V
GS
S
DS
/dt = -100 A/µs;
= 0 V; T
Fig 7.
Fig 9.
= 50 V
R
(m Ω )
DSon
(A)
I
D
25
20
15
10
80
60
40
20
j
5
0
0
= 25 °C;
of gate-source voltage; typical values
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Transfer characteristics; drain current as a
4
0
8
PSMN013-100XS
2
T
j
Min
-
-
-
= 175 ° C
12
4
Typ
0.8
52
109
16
© NXP B.V. 2011. All rights reserved.
T
V
003aag607
003aag610
V
j
GS
= 25 ° C
GS
(V)
-
Max
1.2
-
(V)
20
6
Unit
V
ns
nC
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