PSMN013-100XS NXP Semiconductors, PSMN013-100XS Datasheet - Page 5
![Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C](/photos/41/50/415036/sot186a_3d_sml.gif)
PSMN013-100XS
Manufacturer Part Number
PSMN013-100XS
Description
Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN013-100XS.pdf
(15 pages)
NXP Semiconductors
5. Thermal characteristics
Table 5.
6. Isolation characteristics
Table 6.
PSMN013-100XS
Preliminary data sheet
Symbol
R
R
Symbol
C
V
Fig 5.
isol(RMS)
th(j-mb)
th(j-a)
isol
Z
(K/W)
th(j-mb)
10
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
δ = 0.5
0.2
0.05
0.1
0.02
Thermal characteristics
Isolation characteristics
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Parameter
isolation capacitance
RMS isolation voltage
single shot
10
-5
10
-4
N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A)
All information provided in this document is subject to legal disclaimers.
f = 1 MHz
Conditions
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; sinusoidal
waveform; clean and dust free
10
Rev. 1 — 13 December 2011
-3
10
-2
Conditions
see
vertical in free air
Figure 5
10
-1
PSMN013-100XS
1
Min
-
-
Min
-
-
P
t
p
10
Typ
2.85
55
Typ
10
-
T
© NXP B.V. 2011. All rights reserved.
t
δ =
003aag605
p
(s)
-
-
Max
3.1
Max
2500
T
t
p
t
10
2
Unit
K/W
K/W
Unit
pF
V
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