PSMN010-25YLC NXP Semiconductors, PSMN010-25YLC Datasheet
PSMN010-25YLC
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PSMN010-25YLC Summary of contents
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... PSMN010-25YLC N-channel 25 V 10.6 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 25 October 2011 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...
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... Product data sheet Simplified outline SOT669 (LFPAK; Power-SO8) Description plastic single-ended surface-mounted package; 4 leads All information provided in this document is subject to legal disclaimers. Rev. 2 — 25 October 2011 PSMN010-25YLC Graphic symbol mbb076 Version SOT669 © NXP B.V. 2011. All rights reserved ...
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... P der (%) 150 200 ( ° Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 25 October 2011 PSMN010-25YLC Min - = 20 kΩ - -20 Figure 1 - Figure ° -55 -55 - 110 - = 25 ° ...
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... Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 2 — 25 October 2011 PSMN010-25YLC 003aag231 (ms) AL =10 μ 100 μ 100 (V) DS © NXP B.V. 2011. All rights reserved. ...
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... Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN010-25YLC Product data sheet Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 2 — 25 October 2011 PSMN010-25YLC Min Typ Max - 4.87 5.06 003aag218 tp δ ...
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... Figure see Figure D DS see Figure MHz °C; see Figure 16 j All information provided in this document is subject to legal disclaimers. Rev. 2 — 25 October 2011 PSMN010-25YLC Min Typ Max 22 1.05 1.6 1. ...
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... Figure 18 DS 003aag234 40 R DSon V (V) = 3.0 GS (mΩ) 30 2.8 20 2.6 10 2.4 2 (V) DS Fig 7. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 25 October 2011 PSMN010-25YLC Min Typ - 10.7 - 9.8 - 11.5 - 4.2 - 3 15.1 - 4.8 - 8.8 - 6.3 003aag235 © ...
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... D Fig 9. 003aag238 V GS(th) (V) Max (V) GS Fig 11. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 2 — 25 October 2011 PSMN010-25YLC 150 ° Transfer characteristics; drain current as a function of gate-source voltage; typical values ...
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... Product data sheet 003aag240 3.0 3.5 4 (A) D Fig 13. Normalized drain-source on-state resistance Q GD 003aaa508 Fig 15. Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. Rev. 2 — 25 October 2011 PSMN010-25YLC 2 a 4.5V 1.5 1 0 factor as a function of junction temperature 20V (V) 8 ...
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... V (V) DS Fig 17. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 2 — 25 October 2011 PSMN010-25YLC 150 ° 0.3 0.6 0.9 voltage; typical values 003a a f 444 ...
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... A 0 2.5 scale max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 2 — 25 October 2011 PSMN010-25YLC detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5.8 0.40 0.8 EUROPEAN PROJECTION ...
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... NXP Semiconductors N-channel 25 V 10.6 mΩ logic level MOSFET in LFPAK using NextPower technology 8. Revision history Table 7. Revision history Document ID Release date PSMN010-25YLC v.2 20111025 • Modifications: Data sheet status changed from preliminary to product. PSMN010-25YLC v.1 20110923 PSMN010-25YLC Product data sheet Data sheet status Change notice ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 25 October 2011 PSMN010-25YLC © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 25 October 2011 PSMN010-25YLC Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PSMN010-25YLC All rights reserved. Date of release: 25 October 2011 ...