PSMN009-100P NXP Semiconductors, PSMN009-100P Datasheet - Page 8

• Manufacturer Part Number: PSMN009-100P
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN009-100P
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
R
V
(mΩ)
(V)
DSon
GS
12.5
10
15
7.5
10
8
6
4
2
0
5
of drain current; typical values
charge; typical values
Drain-source on-state resistance as a function
0
0
5 V
50
50
100
100
5.5 V
150
150
V
10 V
GS
All information provided in this document is subject to legal disclaimers.
Q
I
G
D
= 6 V
(nC)
03ai03
(A)
03ai08
20 V
8 V
Rev. 4 — 27 December 2011
200
200
N-channel TrenchMOS SiliconMAX standard level FET
Fig 10. Normalized drain-source on-state resistance
Fig 12. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
a
5
4
3
2
3
2
1
0
10
-60
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
−1
0
1
PSMN009-100P
60
10
120
V
© NXP B.V. 2011. All rights reserved.
DS
T
j
( ° C)
(V)
03aa29
C
C
C
03ai07
iss
oss
rss
180
10
2
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