PMZB290UNE NXP Semiconductors, PMZB290UNE Datasheet
PMZB290UNE
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PMZB290UNE Summary of contents
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... PMZB290UNE 20 V, single N-channel Trench MOSFET Rev. 2 — 7 February 2012 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ...
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... Figure 1. PIN 1 INDICATION READING EXAMPLE: 0111 1011 SOT883B binary marking code description All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 February 2012 PMZB290UNE 20 V, single N-channel Trench MOSFET Graphic symbol 3 G [1] READING DIRECTION MARKING CODE (EXAMPLE) READING DIRECTION © ...
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... ° °C amb HBM 017aaa123 75 125 175 T (°C) j Fig 3. All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 February 2012 PMZB290UNE 20 V, single N-channel Trench MOSFET Min - -8 [ °C - [1] = 100 °C - ≤ 10 µ [ ...
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... Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage PMZB290UNE Product data sheet = V /I DSon All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 February 2012 PMZB290UNE 20 V, single N-channel Trench MOSFET 017aaa374 (1) (2) (3) (4) ( (V) DS © NXP B.V. 2012. All rights reserved. ...
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... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMZB290UNE Product data sheet Conditions in free air − − All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 February 2012 PMZB290UNE 20 V, single N-channel Trench MOSFET Min Typ Max [1] - 305 360 [2] - 150 175 - ...
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... 100 mA ° 200 mA ° 300 mA ° All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 February 2012 PMZB290UNE 20 V, single N-channel Trench MOSFET Min Typ Max - 0.45 0. ...
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... (V) DS Fig 8. 017aaa353 (3) (4) (5) (6) 0.5 0.6 0.7 I (A) D Fig 10. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 February 2012 PMZB290UNE 20 V, single N-channel Trench MOSFET – (A) –4 10 (1) (2) –5 10 –6 10 0.00 0.25 0.50 0. °C; V ...
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... GS Fig 12. Normalized drain-source on-state resistance as 017aaa357 120 180 T (°C) j Fig 14. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 February 2012 PMZB290UNE 20 V, single N-channel Trench MOSFET 1.75 a 1.50 1.25 1.00 0.75 0.50 – function of junction temperature; typical ...
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... °C amb Fig 16. Gate charge waveform definitions 0 (A) 0.6 0.5 0.4 (1) 0.3 0.2 0.1 0.0 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 February 2012 PMZB290UNE 20 V, single N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) 017aaa137 017aaa360 (2) 0 ...
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... PMZB290UNE Product data sheet duty cycle δ 006aaa812 All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 February 2012 PMZB290UNE 20 V, single N-channel Trench MOSFET © NXP B.V. 2012. All rights reserved ...
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... Dimensions in mm 1.3 0.7 0.9 0.25 (2x) 0.3 (2x) 0.4 (2x) solder land plus solder paste solder resist Dimensions in mm All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 February 2012 PMZB290UNE 20 V, single N-channel Trench MOSFET 0.40 0.34 0.04 max 11-11-02 R0.05 (8x) 0.7 0.6 0.3 0.4 SOT883B sot883b_fr © NXP B.V. 2012. All rights reserved ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date PMZB290UNE v.2 20120207 • Modifications: 1 “Product profile” PMZB290UNE v.1 20120201 PMZB290UNE Product data sheet Data sheet status Change notice Product data sheet - is corrected. Product data sheet - All information provided in this document is subject to legal disclaimers. ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 February 2012 PMZB290UNE 20 V, single N-channel Trench MOSFET © NXP B.V. 2012. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 February 2012 PMZB290UNE 20 V, single N-channel Trench MOSFET © NXP B.V. 2012. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 7 February 2012 Document identifier: PMZB290UNE ...