PMZ350XN NXP Semiconductors, PMZ350XN Datasheet - Page 3

• Manufacturer Part Number: PMZ350XN
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMZ350XN_1
Product data sheet
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
P
(%)
(A)
I
10
10
der
D
120
10
10
80
40
0
1
2
1
2
10
function of mounting base temperature
T
P
0
mb
der
1
= 25 C; I
=
----------------------- -
P
tot 25 C
50
P
tot
DM
is single pulse
100 %
100
150
T
003aac031
sp
1
( C)
Rev. 01 — 21 February 2008
Limit R
200
DSon
= V
DS
Fig 2. Normalized continuous drain current as a
/ I
D
( %)
I
der
120
DC
80
40
0
function of mounting base temperature
I
0
der
N-channel TrenchMOS standard level FET
=
10
------------------- -
I
D 25 C
I
50
D
100 %
100 s
1 ms
10 ms
100 ms
t
p
100
= 10 s
V
DS
(V)
PMZ350XN
150
© NXP B.V. 2008. All rights reserved.
T
003aac033
sp
003aac203
( C)
200
10
2
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