PMZ270XN NXP Semiconductors, PMZ270XN Datasheet - Page 8

• Manufacturer Part Number: PMZ270XN
• Description: Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMZ270XN_1
Product data sheet
Fig 13. Source current as a function of source-drain
R
DSon
( )
0.8
0.6
0.4
0.2
1
0
T
voltage; typical values
0
j
= 25 C and 150 C; V
0.5
V
GS
(V) = 1.8
1
GS
1.5
= 0 V
2
2
I
D
03an03
(A)
2.5
4.5
Rev. 01 — 21 February 2008
3
2.5
Fig 14. Input, output and reverse transfer capacitances
(pF)
(pF)
C
C
N-channel TrenchMOS extremely low level FET
10
10
10
10
1
1
2
2
10
10
V
as a function of drain-source voltage; typical
values
GS
1
1
= 0 V; f = 1 MHz
1
1
PMZ270XN
10
10
V
V
© NXP B.V. 2008. All rights reserved.
DS
DS
C
C
C
C
C
C
iss
iss
oss
oss
rss
rss
(V)
(V)
03an00
03an00
10
10
2
2
8 of 13