PMV117EN NXP Semiconductors, PMV117EN Datasheet
PMV117EN
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PMV117EN Summary of contents
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... PMV117EN TrenchMOS™ enhanced logic level FET Rev. 02 — 7 April 2005 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS™ technology. 1.2 Features Logic level threshold Subminiature surface-mounted package 1.3 Applications Battery management High-speed switch 1 ...
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... 100 pulsed Figure pulsed Rev. 02 — 7 April 2005 PMV117EN TrenchMOS™ enhanced logic level FET Min - = Figure 2 and 3 - Figure Figure © ...
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... I der (%) 80 40 150 200 Fig 2. Normalized continuous drain current Rev. 02 — 7 April 2005 PMV117EN TrenchMOS™ enhanced logic level FET 100 150 -------------------- - I = 100 % der function of solder point temperature ...
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... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration 9397 750 14709 Product data sheet TrenchMOS™ enhanced logic level FET Conditions Figure Rev. 02 — 7 April 2005 PMV117EN Min Typ Max Unit - - 100 K/W 03ak55 ...
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... DD GS Figure MHz Figure 0. Figure /dt = 100 Rev. 02 — 7 April 2005 PMV117EN Min Typ Max 1 1 2.7 - 0.01 0 100 and 8 - ...
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... V (V) DS Fig 6. Drain-source on-state resistance as a function 03ak59 25 ˚ (V) GS > DSon Fig 8. Normalized drain-source on-state resistance Rev. 02 — 7 April 2005 PMV117EN TrenchMOS™ enhanced logic level FET 400 ˚ DSon 300 200 100 ...
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... Fig 10. Sub-threshold drain current as a function 0 ( Rev. 02 — 7 April 2005 PMV117EN TrenchMOS™ enhanced logic level FET 1 2 min typ 0.8 1.6 2 gate-source voltage 03ak62 6 Q ...
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... Product data sheet 03ak60 25 ˚C 0.9 1 Fig 13. Input, output and reverse transfer capacitances Rev. 02 — 7 April 2005 PMV117EN TrenchMOS™ enhanced logic level FET (pF MHz function of drain-source voltage ...
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... 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC JEITA TO-236AB Rev. 02 — 7 April 2005 PMV117EN TrenchMOS™ enhanced logic level FET detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2005. All rights reserved. ...
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... Product data sheet - “Characteristics”; correction to V GS(th) information”: added Product data - Rev. 02 — 7 April 2005 PMV117EN TrenchMOS™ enhanced logic level FET Doc. number Supersedes 9397 750 14709 PMV117EN-01 data 9397 750 11095 - © Koninklijke Philips Electronics N.V. 2005. All rights reserved ...
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... Trademarks TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 02 — 7 April 2005 PMV117EN TrenchMOS™ enhanced logic level FET © Koninklijke Philips Electronics N.V. 2005. All rights reserved ...
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... No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Published in The Netherlands PMV117EN Date of release: 7 April 2005 Document number: 9397 750 14709 ...