PMN34UP NXP Semiconductors, PMN34UP Datasheet - Page 7

• Manufacturer Part Number: PMN34UP
• Description: P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMN34UP
Product data sheet
Fig 10. Transfer characteristics: drain current as a
Fig 12. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
–1.2
–0.8
–0.4
D
–16
–12
–8
–4
0
0
–60
function of gate-source voltage; typical values
junction temperature
V
(1) T
(2) T
I
(1) maximum values
(2) typical values
(3) minimum values
0
D
DS
= -0.25 mA; V
> I
j
j
= 25 °C
= 150 °C
D
× R
0
DSon
(2)
–1
DS
(1)
= V
60
(1)
(2)
(3)
(1)
GS
–2
(2)
120
V
All information provided in this document is subject to legal disclaimers.
GS
017aaa213
017aaa148
T
j
(V)
(°C)
180
–3
Rev. 1 — 9 May 2011
Fig 11. Normalized drain-source on-state resistance as
Fig 13. Input, output and reverse transfer capacitances
(pF)
C
a
10
10
10
2.0
1.5
1.0
0.5
0.0
10
–10
1
4
3
2
–60
a function of junction temperature; typical
values
as a function of drain-source voltage; typical
values
f = 1 MHz; V
(1) C
(2) C
(3) C
–1
iss
oss
rss
20 V, 5 A P-channel Trench MOSFET
0
GS
–1
= 0 V
(1)
(2)
(3)
60
–10
PMN34UP
120
V
© NXP B.V. 2011. All rights reserved.
DS
017aaa147
T
017aaa149
j
(V)
(°C)
–10
180
2
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