PML340SN NXP Semiconductors, PML340SN Datasheet - Page 3

• Manufacturer Part Number: PML340SN
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
PML340SN_1
Product data sheet
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
10
P
(%)
10
(A)
120
der
I
10
D
-1
80
40
2
1
0
function of mounting base temperature
T
P
1
mb
0
der
= 25 C; I
=
----------------------- -
P
tot 25 C
50
P
tot
DM
is single pulse
100 %
100
Limit R
150
T
DSon
mb
10
03ne36
( C)
= V
DS
200
Rev. 01 — 24 August 2006
/ I
D
DC
Fig 2. Normalized continuous drain current as a
(%)
I
der
120
80
40
0
function of mounting base temperature
I
0
der
N-channel TrenchMOS standard level FET
=
10
------------------- -
I
2
D 25 C
I
50
D
100 %
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
100
t
100 s
1 ms
10 ms
V
p
DS
=
10 s
(V)
PML340SN
150
T
003aab516
mb
03ne37
( C)
10
200
3
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