PMGD8000LN NXP Semiconductors, PMGD8000LN Datasheet
PMGD8000LN
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PMGD8000LN Summary of contents
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... Dual TrenchMOS™ logic level FET Rev. 01 — 27 February 2003 MBD128 1. Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMGD8000LN in SOT363 (SC-88). 2. Features TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applications ...
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... Figure 2 and amb Figure 2 amb pulsed Figure 3 amb Figure 1 amb = 25 C amb Rev. 01 — 27 February 2003 PMGD8000LN Typ Max Unit - 125 150 C 1.8 8 2.9 13 Min Max Unit - ...
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... T amb ( der Fig 2. Normalized continuous drain current as a function of ambient temperature Rev. 01 — 27 February 2003 PMGD8000LN Dual TrenchMOS™ logic level FET 03aa19 0 50 100 150 T amb ( ------------------ - 100 03ah13 ...
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... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration. 9397 750 10939 Product data Conditions minimum footprint; mounted on a PCB; vertical in still air Rev. 01 — 27 February 2003 PMGD8000LN Dual TrenchMOS™ logic level FET Min Typ Max Unit - - 625 K/W 03ah12 (s) © ...
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... 150 4 0 MHz; Figure 100 ; Figure Rev. 01 — 27 February 2003 PMGD8000LN Min Typ Max Unit 0 0.01 1 100 1 2.9 12 ...
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... V 3 0.5 0 0 Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 27 February 2003 PMGD8000LN Dual TrenchMOS™ logic level FET 03ah16 V DS > DSon 150 ( DSon ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage (pF (V) Rev. 01 — 27 February 2003 PMGD8000LN Dual TrenchMOS™ logic level FET 03ah77 min typ max 0 0 03ah18 C iss C oss C rss 10 2 © ...
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... 100 mA Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 27 February 2003 PMGD8000LN Dual TrenchMOS™ logic level FET 03ah19 100 200 300 400 Q G (pC © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ...
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... scale 2.2 1.35 2.2 0.45 1.3 0.65 1.8 1.15 2.0 0.15 REFERENCES JEDEC EIAJ SC-88 Rev. 01 — 27 February 2003 PMGD8000LN Dual TrenchMOS™ logic level FET detail 0.25 0.2 0.2 0.1 0.15 EUROPEAN ISSUE DATE PROJECTION 97-02-28 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ...
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... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20030227 - Product data (9397 750 10939) 9397 750 10939 Product data Dual TrenchMOS™ logic level FET Rev. 01 — 27 February 2003 PMGD8000LN © Koninklijke Philips Electronics N.V. 2003. All rights reserved ...
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... Rev. 01 — 27 February 2003 Rev. 01 — 27 February 2003 PMGD8000LN PMGD8000LN Dual TrenchMOS™ logic level FET Dual TrenchMOS™ logic level FET (CPCN). Philips Semiconductors ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 27 February 2003 Document order number: 9397 750 10939 PMGD8000LN Dual TrenchMOS™ logic level FET ...