PMGD780SN NXP Semiconductors, PMGD780SN Datasheet - Page 6

• Manufacturer Part Number: PMGD780SN
• Description: Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMGD780SN_2
Product data sheet
Fig 5.
Fig 7.
R
(A)
(Ω)
I
DSon
D
1.5
0.5
3
2
1
0
2
1
0
T
Output characteristics: drain current as a
function of drain-source voltage; typical
values
T
Drain-source on-state resistance as a function
of drain current; typical values
0
0
j
j
= 25 °C
= 25 °C
V
GS
(V) = 3.5
0.2
1
0.4
0.6
4
2
10
V
V
0.8
All information provided in this document is subject to legal disclaimers.
DS
GS
(V)
I
03an88
(V) = 3
03an89
4.5
D
(A)
4.5
3.5
10
5
6
6
5
4
3
1
Rev. 02 — 19 April 2010
Fig 6.
Fig 8.
Dual N-channel μTrenchMOS standard level FET
(A)
a
I
D
2.4
1.8
1.2
0.6
0.8
0.6
0.4
0.2
0
1
0
−60
T
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Normalized drain-source on-state resistance
as a function of junction temperature
0
a
j
= 25 °C and 150 °C; V
=
---------------------------- -
R
DSon 25 C
R
1
DSon
0
(
°
T
)
j
2
= 150 °C
60
PMGD780SN
DS
3
> I
D
25 °C
× R
120
© NXP B.V. 2010. All rights reserved.
DSon
4
T
V
j
03an90
GS
(°C)
03aa28
(V)
180
5
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