PMDPB65UP NXP Semiconductors, PMDPB65UP Datasheet - Page 11

• Manufacturer Part Number: PMDPB65UP
• Description: Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
9. Soldering
PMDPB65UP
Product data sheet
Fig 18. Reflow soldering footprint for SOT1118 (HUSON6)
2.25
0.875
0.875
0.35
0.45
(6×)
(6×)
0.65
0.49
All information provided in this document is subject to legal disclaimers.
2.1
0.49
0.65
Rev. 2 — 8 March 2011
0.72
0.82
(2×)
(2×)
1.05
(6×)
(2×)
0.3
1.15
(6×)
(2×)
0.4
20 V, 3.5 A dual P-channel Trench MOSFET
Dimensions in mm
PMDPB65UP
solder lands
solder paste
solder resist
occupied area
sot1118_fr
© NXP B.V. 2011. All rights reserved.
11 of 15