PMBF170 NXP Semiconductors, PMBF170 Datasheet - Page 4

• Manufacturer Part Number: PMBF170
• Description: Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

7. Thermal characteristics
Table 4:
Philips Semiconductors
9397 750 07208
Product specification
Symbol
R
R
th(j-sp)
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to solder
point
thermal resistance from junction to ambient
7.1 Transient thermal impedance
Fig 4. Transient thermal impedance from junction to solder point as a function of
Mounted on metal clad substrate.
pulse duration.
Z th(j-sp)
K/W
10 -1
10 3
10
10 2
1
10 -5
0.2
0.1
0.02
= 0.5
Rev. 03 — 23 June 2000
single pulse
10 -4
Conditions
mounted on a metal clad substrate;
Figure 4
mounted on a printed circuit board;
minimum footprint
N-channel enhancement mode field-effect transistor
0.05
10 -3
10 -2
10 -1
© Philips Electronics N.V. 2000. All rights reserved.
P
PMBF170
Value
150
350
t p
1
T
t p (s)
=
03aa01
t p
T
t
10
Unit
K/W
K/W
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