PHT8N06LT NXP Semiconductors, PHT8N06LT Datasheet - Page 5

• Manufacturer Part Number: PHT8N06LT
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
January 1998
TrenchMOS
Logic level FET
Fig.9. Normalised drain-source on-state resistance.
ID/A
I
D
a = R
Fig.8. Typical transconductance, T
20
15
10
15
14
13
12
11
10
2.5
1.5
0.5
= f(V
5
0
9
8
7
6
5
-100
2
1
0
0
Transconductance, gfs (S)
Fig.7. Typical transfer characteristics.
a
Tj/C =
DS(ON)
GS
g
) ; conditions: V
fs
-50
= f(I
/R
1
DS(ON)25 ˚C
5
BUK98XX-55
D
); conditions: V
150
transistor
0
Drain current, ID (A)
Tmb / degC
2
= f(T
VGS/V
10
50
DS
Rds(on) normalised to 25degC
j
25
); I
= 25 V; parameter T
D
3
100
DS
= 5 A; V
= 25 V
15
150
j
= 25 ˚C .
4
GS
= 5 V
200
20
5
j
5
1E-01
1E-02
1E-03
1E-04
1E-05
1E-05
2.5
1.5
0.5
V
.9
.8
.7
.6
.5
.4
.3
.2
.1
1
Fig.12. Typical capacitances, C
0
0.01
2
1
0
-100
I
C = f(V
GS(TO)
D
0
VGS(TO) / V
= f(V
Fig.11. Sub-threshold drain current.
max.
min.
typ.
Fig.10. Gate threshold voltage.
= f(T
GS)
DS
-50
0.5
); conditions: V
; conditions: T
j
0.1
); conditions: I
2%
0
1
Tj / C
typ
50
1
1.5
j
GS
D
= 25 ˚C; V
VDS/V
= 1 mA; V
Sub-Threshold Conduction
= 0 V; f = 1 MHz
98%
100
Product specification
2
10
iss
PHT8N06LT
, C
BUK98xx-55
150
DS
DS
oss
= V
2.5
, C
= V
Rev 1.100
GS
rss
200
100
GS
.
Coss
Crss
Ciss
3