PHP9NQ20T NXP Semiconductors, PHP9NQ20T Datasheet
![Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/50/415038/sot078_3d_sml.gif)
PHP9NQ20T
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PHP9NQ20T Summary of contents
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... PHP9NQ20T N-channel TrenchMOS standard level FET Rev. 03 — 16 December 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... N-channel TrenchMOS standard level FET Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 03 — 16 December 2010 PHP9NQ20T Graphic symbol mbb076 3 Version SOT78 © NXP B.V. 2010. All rights reserved. ...
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... T (°C) mb Fig 2. Normalized continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 03 — 16 December 2010 PHP9NQ20T N-channel TrenchMOS standard level FET Min - = 20 kΩ - -55 - ° 7.2 A ...
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... V (V) DS Fig 4. All information provided in this document is subject to legal disclaimers. Rev. 03 — 16 December 2010 PHP9NQ20T N-channel TrenchMOS standard level FET 10 prior to avalanche = 150 ° −1 −3 −2 − unclamped inductive load Single-shot avalanche rating ...
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... P 0.1 −1 0.05 10 0.02 single pulse −2 10 −6 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 03 — 16 December 2010 PHP9NQ20T N-channel TrenchMOS standard level FET Min Typ - - - 60 003aae677 t p δ −2 − (s) p Max Unit 1 ...
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... ° /dt = -100 A/µ - All information provided in this document is subject to legal disclaimers. Rev. 03 — 16 December 2010 PHP9NQ20T Min Typ Max = 25 °C 200 - - = -55 °C 178 - - 175 °C ...
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... (V) GS Fig 9. 003aae682 V 100 180 T (°C) j Fig 11. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 03 — 16 December 2010 PHP9NQ20T N-channel TrenchMOS standard level FET 0.5 4.5 5 DS(on) (Ω) 0.4 0.3 5.5 0 °C j Drain-source on-state resistance as a function of drain current ...
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... Fig 13. Input, output and reverse transfer capacitances 003aae686 V = 160 (nC) G Fig 15. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 03 — 16 December 2010 PHP9NQ20T N-channel TrenchMOS standard level FET (pF − ...
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... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 03 — 16 December 2010 PHP9NQ20T N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2.79 3.5 2.7 2.2 ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number PHP9NQ20T separated from data sheet PHB_PHD_PHP9NQ20T v.2. Product specification All information provided in this document is subject to legal disclaimers. Rev. 03 — 16 December 2010 PHP9NQ20T ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 03 — 16 December 2010 PHP9NQ20T N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 16 December 2010 PHP9NQ20T N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 16 December 2010 Document identifier: PHP9NQ20T ...