PHP79NQ08LT NXP Semiconductors, PHP79NQ08LT Datasheet - Page 7

• Manufacturer Part Number: PHP79NQ08LT
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHP79NQ08LT
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
R
(mΩ)
V
(V)
DSon
GS
40
30
20
10
0
5
4
3
2
1
0
of drain current; typical values
charge; typical values
Drain-source on-state resistance as a function
0
0
2.5
20
10
V
DD
= 14 V
2.8
40
20
V
GS
(V) = 4
3
V
60
30
10
4.5
5
DD
All information provided in this document is subject to legal disclaimers.
Q
003aaa975
003aaa915
= 60 V
I
G
D
3.2
(A)
(nC)
3.5
80
40
Rev. 03 — 26 April 2010
Fig 10. Normalized drain-source on-state resistance
Fig 12. Gate charge waveform definitions
a
2.4
1.6
0.8
0
−60
factor as a function of junction temperature
V
V
V
V
GS(pl)
DS
GS(th)
GS
N-channel TrenchMOS logic level FET
Q
0
GS1
I
Q
D
GS
Q
PHP79NQ08LT
GS2
60
Q
G(tot)
Q
GD
120
© NXP B.V. 2010. All rights reserved.
003aaa508
003aaa918
T
j
(°C)
180
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