PHP45NQ10T NXP Semiconductors, PHP45NQ10T Datasheet - Page 7

• Manufacturer Part Number: PHP45NQ10T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHP45NQ10T
Product data sheet
Fig 12. Sub-threshold drain current as a function of
Fig 14. Gate-source voltage as a function of gate
(A)
l
D
V
(V)
10
10
10
10
10
10
GS
16
12
−1
−2
−3
−4
−5
−6
8
4
0
gate-source voltage
charge; typical values
T
T
0
5
j
j
= 25 °C; V
= 25 °C; I
minimum
1
20
V
DD
D
DS
= 45 A
= 20 V
= V
2
GS
40
typical
3
V
DD
60
= 80 V
maximum
All information provided in this document is subject to legal disclaimers.
4
Q
014aab212
014aab214
V
G
GS
(nC)
(V)
80
5
Rev. 02 — 8 July 2010
Fig 13. Input, output and reverse transfer capacitances
Fig 15. Source (diode forward) current as a function of
(A)
I
(pF)
F
10
10
10
C
10
50
40
30
20
10
0
4
3
2
10
as a function of drain-source voltage; typical
values
source-drain (diode forward) voltage; typical
values
V
V
0
−1
GS
GS
N-channel TrenchMOS standard level FET
= 0 V; f = 1 MHz
= 0 V
T
0.4
1
j
= 175 °C
PHP45NQ10T
0.8
10
T
V
V
j
© NXP B.V. 2010. All rights reserved.
SDS
= 25 °C
DS
014aab213
014aab215
(V)
(V)
C
C
C
oss
rss
iss
10
1.2
2
7 of 12