PHP29N08T NXP Semiconductors, PHP29N08T Datasheet
PHP29N08T
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PHP29N08T Summary of contents
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... PHP29N08T N-channel TrenchMOS standard level FET Rev. 02 — 12 March 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... °C; see °C; see Figure °C mb ≤ 10 µs; pulsed ° Rev. 02 — 12 March 2009 PHP29N08T N-channel TrenchMOS standard level FET Graphic symbol mbb076 3 Version SOT78 Min Max - - ...
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... P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature / Rev. 02 — 12 March 2009 PHP29N08T N-channel TrenchMOS standard level FET 03aa16 50 100 150 T (°C) mb 03aj06 = 10 μ 100 μ (V) DS © NXP B.V. 2009. All rights reserved. ...
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... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PHP29N08T_2 Product data sheet Conditions see Figure 4 vertical in still air −3 −2 10 Rev. 02 — 12 March 2009 PHP29N08T N-channel TrenchMOS standard level FET Min Typ Max - - 1 03aj05 δ ...
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... G(ext ° see Figure /dt = -100 A/µ ° Rev. 02 — 12 March 2009 PHP29N08T N-channel TrenchMOS standard level FET Min Typ Max 500 - ...
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... Transfer characteristics: drain current as a function of gate-source voltage; typical values 03aj13 6.4 V GS(th) (V) 4.8 max 3.2 1.6 0 − (V) GS Fig 8. Gate-source threshold voltage as a function of junction temperature Rev. 02 — 12 March 2009 PHP29N08T 03aj09 × R > DSon = 25 °C 175 ° (V) GS 03aj14 max typ min ...
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... 37 (nC) G Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 12 March 2009 PHP29N08T N-channel TrenchMOS standard level FET 03ac63 0 60 120 T (°C) j 03aj11 C iss C oss C rss − ...
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... Fig 13. Source current as a function of source-drain voltage; typical values PHP29N08T_2 Product data sheet ( 175 ° 0.3 0.6 0.9 Rev. 02 — 12 March 2009 PHP29N08T N-channel TrenchMOS standard level FET 03aj10 = 25 °C j 1.2 V (V) SD © NXP B.V. 2009. All rights reserved ...
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... 0.7 16.0 6.6 10.3 15.0 2.54 0.4 15.2 5.9 9.7 12.8 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB Rev. 02 — 12 March 2009 PHP29N08T N-channel TrenchMOS standard level FET mounting base Q c ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.5 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION 08-04-23 08-06-13 © NXP B.V. 2009. All rights reserved. ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number PHP29N08T_2 separated from data sheet PHP_PHB29N08T-01. PHP_PHB29N08T-01 20020529 (9397 750 09651) PHP29N08T_2 ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 12 March 2009 PHP29N08T N-channel TrenchMOS standard level FET © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PHP29N08T_2 All rights reserved. Date of release: 12 March 2009 ...