PHP23NQ11T NXP Semiconductors, PHP23NQ11T Datasheet - Page 7

• Manufacturer Part Number: PHP23NQ11T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHP23NQ11T_2
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
R
DSon
(Ω)
V
0.15
0.05
(V)
GS
0.2
0.1
15
10
0
5
0
of drain current; typical values
charge; typical values
Drain-source on-state resistance as a function
0
0
4.6 V 4.8 V
I
T
D
j
= 25 °C
= 23 A
V
DD
10
= 20 V
5
5 V
5.2 V
10
20
80 V
5.4 V
8 V
30
15
6 V
V
T
GS
All information provided in this document is subject to legal disclaimers.
j
Q
= 25 °C
I
G
D
= 10 V
03ao57
03ao53
(nC)
(A)
Rev. 02 — 25 February 2010
20
40
Fig 10. Normalized drain-source on-state resistance
Fig 12. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
a
4
3
2
3
2
1
0
10
-60
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
−1
N-channel TrenchMOS standard level FET
0
1
60
PHP23NQ11T
10
120
V
© NXP B.V. 2010. All rights reserved.
DS
03aa29
T
j
(V)
( ° C)
03ao56
C
C
C
iss
oss
rss
10
180
2
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