PHP18NQ11T NXP Semiconductors, PHP18NQ11T Datasheet
PHP18NQ11T
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PHP18NQ11T Summary of contents
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... PHP18NQ11T N-channel TrenchMOS standard level FET Rev. 02 — 10 March 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... ° j(init Ω unclamped 0.1 ms All information provided in this document is subject to legal disclaimers. Rev. 02 — 10 March 2010 PHP18NQ11T N-channel TrenchMOS standard level FET Graphic symbol Min - - -20 Figure 1 - and 3 - Figure ...
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... T (°C) mb Fig All information provided in this document is subject to legal disclaimers. Rev. 02 — 10 March 2010 PHP18NQ11T N-channel TrenchMOS standard level FET 120 P der (%) 100 Normalized total power dissipation as a function of mounting base temperature = 10 μs ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PHP18NQ11T_2 Product data sheet Conditions see Figure 4 in free air − All information provided in this document is subject to legal disclaimers. Rev. 02 — 10 March 2010 PHP18NQ11T N-channel TrenchMOS standard level FET Min Typ - - - − ...
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... see Figure /dt = 100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 10 March 2010 PHP18NQ11T N-channel TrenchMOS standard level FET Min Typ 98 - 110 - 0. ...
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... V 1 (V) DS Fig 6. 03aa35 V typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 10 March 2010 PHP18NQ11T N-channel TrenchMOS standard level FET ( 175 ° Transfer characteristics: drain current as a function of gate-source voltage; typical values ...
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... (nC) G Fig 12. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 02 — 10 March 2010 PHP18NQ11T N-channel TrenchMOS standard level FET - 120 factor as a function of junction temperature 4 3 ...
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... Fig 13. Source current as a function of source-drain voltage; typical values PHP18NQ11T_2 Product data sheet ( 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 10 March 2010 PHP18NQ11T N-channel TrenchMOS standard level FET 003aaa596 25 °C 0.9 1.2 V (V) SD © NXP B.V. 2010. All rights reserved ...
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... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 10 March 2010 PHP18NQ11T N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2.79 3.5 2.7 2.2 ...
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... Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. PHP18NQ11T-01 (9397 20031113 750 12305) PHP18NQ11T_2 Product data sheet N-channel TrenchMOS standard level FET ...
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... All information provided in this document is subject to legal disclaimers. Rev. 02 — 10 March 2010 PHP18NQ11T N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 10 March 2010 PHP18NQ11T N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 10 March 2010 Document identifier: PHP18NQ11T_2 ...