PHP18NQ10T NXP Semiconductors, PHP18NQ10T Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PHP18NQ10T

Manufacturer Part Number
PHP18NQ10T
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
Table 1.
Symbol
V
I
P
Static characteristics
R
Dynamic characteristics
Q
D
DS
tot
DSon
GD
PHP18NQ10T
N-channel TrenchMOS standard level FET
Rev. 02 — 16 December 2010
Higher operating power due to low
thermal resistance
Low conduction losses due to low
on-state resistance
DC-to-DC converters
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
gate-drain charge
Conditions
T
T
T
V
T
V
V
j
mb
mb
j
GS
GS
DS
≥ 25 °C; T
= 25 °C
= 25 °C; V
= 25 °C
= 80 V; T
= 10 V; I
= 10 V; I
j
D
D
≤ 175 °C
j
Suitable for high frequency
applications due to fast switching
characteristics
Switched-mode power supplies
GS
= 25 °C
= 9 A;
= 18 A;
= 10 V
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
80
8
Max Unit
100
18
79
90
-
V
A
W
mΩ
nC

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PHP18NQ10T Summary of contents

Page 1

... PHP18NQ10T N-channel TrenchMOS standard level FET Rev. 02 — 16 December 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...

Page 2

... N-channel TrenchMOS standard level FET Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHP18NQ10T Graphic symbol mbb076 3 Version SOT78 © NXP B.V. 2010. All rights reserved. ...

Page 3

... T (°C) mb Fig 2. Normalized continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHP18NQ10T N-channel TrenchMOS standard level FET Min - = 20 kΩ - -55 - ° ...

Page 4

... V (V) DS Fig 4. All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHP18NQ10T N-channel TrenchMOS standard level FET °C prior to avalanche = 150 ° −1 −3 −2 − unclamped inductive load Single-shot avalanche rating ...

Page 5

... D = 0.5 1 0.2 0.1 P 0.05 −1 10 0.02 single pulse −2 10 −6 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHP18NQ10T N-channel TrenchMOS standard level FET Min Typ - - - 60 003aae632 t p δ −2 − (s) p ...

Page 6

... ° ° /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHP18NQ10T Min Typ Max 100 - - - - 500 - 0 ...

Page 7

... DS Fig 7. 003aae635 = 25 ° (V) GS Fig 9. 003aae637 100 180 T (°C) j Fig 11. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHP18NQ10T N-channel TrenchMOS standard level FET 0.20 4.6 5 5.4 DS(on) (Ω) 4.8 5.2 0.16 0.12 0.08 0. °C j Drain-source on-state resistance as a function of drain current ...

Page 8

... Fig 13. Input, output and reverse transfer capacitances 003aae641 (nC) G Fig 15. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHP18NQ10T N-channel TrenchMOS standard level FET (pF −1 10 ...

Page 9

... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHP18NQ10T N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2.79 3.5 2.7 2.2 ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number PHP18NQ10T separated from data sheet PHB_PHD_PHP18NQ10T v.1. Product specification All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHP18NQ10T ...

Page 11

... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHP18NQ10T N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHP18NQ10T N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2010. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 16 December 2010 Document identifier: PHP18NQ10T ...

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