PHK12NQ03LT NXP Semiconductors, PHK12NQ03LT Datasheet

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PHK12NQ03LT

Manufacturer Part Number
PHK12NQ03LT
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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PHK12NQ03LT
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PHK12NQ03LT
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PHK12NQ03LTЈ¬518
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1. Product profile
2. Pinning information
Table 1:
3. Ordering information
Table 2:
Pin
1,2,3
4
5,6,7,8
Type number
PHK12NQ03LT
Pinning - SOT96-1 (SO8), simplified outline and symbol
Ordering information
Description
source (s)
gate (g)
drain (d)
M3D315
Package
Name
SO8
1.1 Description
1.2 Features
1.3 Applications
1.4 Quick reference data
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
PHK12NQ03LT
N-channel TrenchMOS™ logic level FET
Rev. 02 — 02 March 2004
Low on-state resistance
DC-to-DC converters
V
P
Description
Plastic small outline package; 8 leads
DS
tot
2.5 W
30 V
Simplified outline
SOT96-1 (SO8)
1
8
Top view
MBK187
5
4
Symbol
Fast switching.
Portable equipment applications.
I
R
D
DSon
11.8 A
14 m
MBB076
g
d
s
Product data
Version
SOT96

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PHK12NQ03LT Summary of contents

Page 1

... Ordering information Table 2: Ordering information Type number Package Name PHK12NQ03LT SO8 PHK12NQ03LT N-channel TrenchMOS™ logic level FET Rev. 02 — 02 March 2004 Low on-state resistance DC-to-DC converters 2.5 W tot Simplified outline 8 1 Top view ...

Page 2

... C; pulsed Figure 1 amb pulsed amb p unclamped inductive load 7 2.35 ms starting Rev. 02 — 02 March 2004 PHK12NQ03LT Min Max - and 3 - 11.8 Figure 3 - 35.3 - 2.5 55 +150 55 +150 - 11.8 - 440 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...

Page 3

... I der (%) 150 200 T amb ( der Fig 2. Normalized continuous drain current as a function of ambient temperature Rev. 02 — 02 March 2004 PHK12NQ03LT N-channel TrenchMOS™ logic level FET 0 50 100 150 T amb ( ------------------- 100 003aaa160 100 s ...

Page 4

... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration. 9397 750 12955 Product data N-channel TrenchMOS™ logic level FET Conditions mounted on a printed-circuit board; minimum footprint Rev. 02 — 02 March 2004 PHK12NQ03LT Min Typ Max Unit - - 10 s; Figure 4 p 003aaa161 ...

Page 5

... MHz Figure 2 /dt = 100 Rev. 02 — 02 March 2004 PHK12NQ03LT Min Typ Max Figure 100 - 8.9 10 Figure ...

Page 6

... V DS (V) Fig 6. Transfer characteristics: drain current as a 003aaa164 2 (A) Fig 8. Normalized drain source on-state resistance Rev. 02 — 02 March 2004 PHK12NQ03LT N-channel TrenchMOS™ logic level FET > DSon 150 C ...

Page 7

... Fig 10. Sub-threshold drain current as a function of 003aaa165 I S (A) C iss C oss C rss ( Fig 12. Source (diode forward) current as a function of Rev. 02 — 02 March 2004 PHK12NQ03LT N-channel TrenchMOS™ logic level FET min typ max gate-source voltage ...

Page 8

... Fig 13. Gate-source voltage as a function of gate charge; typical values. 9397 750 12955 Product data ( Rev. 02 — 02 March 2004 PHK12NQ03LT N-channel TrenchMOS™ logic level FET 003aaa167 (nC) © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...

Page 9

... 2.5 scale (1) ( 0.49 0.25 5.0 4.0 1.27 0.36 0.19 4.8 3.8 0.019 0.0100 0.20 0.16 0.05 0.014 0.0075 0.19 0.15 REFERENCES JEDEC JEITA MS-012 Rev. 02 — 02 March 2004 PHK12NQ03LT N-channel TrenchMOS™ logic level FET detail 6.2 1.0 0.7 1.05 0.25 0.25 5.8 0.4 0.6 0.244 ...

Page 10

... Section 4 “Limiting values” Figure Section 4 “Limiting values” E DS(AL)S Section 5 “Thermal characteristics” Section 5 “Thermal characteristics” Figure 4 Section 6 “Characteristics” Figure 13 Rev. 02 — 02 March 2004 PHK12NQ03LT N-channel TrenchMOS™ logic level FET correction to I value and I conditions and values corrected. ...

Page 11

... Trademarks TrenchMOS — Rev. 02 — 02 March 2004 Rev. 02 — 02 March 2004 PHK12NQ03LT PHK12NQ03LT N-channel TrenchMOS™ logic level FET N-channel TrenchMOS™ logic level FET is a trademark of Koninklijke Philips Electronics N.V. Fax: + 24825 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...

Page 12

... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 02 March 2004 Document order number: 9397 750 12955 PHK12NQ03LT N-channel TrenchMOS™ logic level FET ...

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