PHK12NQ03LT NXP Semiconductors, PHK12NQ03LT Datasheet
![Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/50/415041/sot096-1_3d_sml.gif)
PHK12NQ03LT
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PHK12NQ03LT Summary of contents
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... Ordering information Table 2: Ordering information Type number Package Name PHK12NQ03LT SO8 PHK12NQ03LT N-channel TrenchMOS™ logic level FET Rev. 02 — 02 March 2004 Low on-state resistance DC-to-DC converters 2.5 W tot Simplified outline 8 1 Top view ...
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... C; pulsed Figure 1 amb pulsed amb p unclamped inductive load 7 2.35 ms starting Rev. 02 — 02 March 2004 PHK12NQ03LT Min Max - and 3 - 11.8 Figure 3 - 35.3 - 2.5 55 +150 55 +150 - 11.8 - 440 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
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... I der (%) 150 200 T amb ( der Fig 2. Normalized continuous drain current as a function of ambient temperature Rev. 02 — 02 March 2004 PHK12NQ03LT N-channel TrenchMOS™ logic level FET 0 50 100 150 T amb ( ------------------- 100 003aaa160 100 s ...
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... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration. 9397 750 12955 Product data N-channel TrenchMOS™ logic level FET Conditions mounted on a printed-circuit board; minimum footprint Rev. 02 — 02 March 2004 PHK12NQ03LT Min Typ Max Unit - - 10 s; Figure 4 p 003aaa161 ...
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... MHz Figure 2 /dt = 100 Rev. 02 — 02 March 2004 PHK12NQ03LT Min Typ Max Figure 100 - 8.9 10 Figure ...
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... V DS (V) Fig 6. Transfer characteristics: drain current as a 003aaa164 2 (A) Fig 8. Normalized drain source on-state resistance Rev. 02 — 02 March 2004 PHK12NQ03LT N-channel TrenchMOS™ logic level FET > DSon 150 C ...
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... Fig 10. Sub-threshold drain current as a function of 003aaa165 I S (A) C iss C oss C rss ( Fig 12. Source (diode forward) current as a function of Rev. 02 — 02 March 2004 PHK12NQ03LT N-channel TrenchMOS™ logic level FET min typ max gate-source voltage ...
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... Fig 13. Gate-source voltage as a function of gate charge; typical values. 9397 750 12955 Product data ( Rev. 02 — 02 March 2004 PHK12NQ03LT N-channel TrenchMOS™ logic level FET 003aaa167 (nC) © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...
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... 2.5 scale (1) ( 0.49 0.25 5.0 4.0 1.27 0.36 0.19 4.8 3.8 0.019 0.0100 0.20 0.16 0.05 0.014 0.0075 0.19 0.15 REFERENCES JEDEC JEITA MS-012 Rev. 02 — 02 March 2004 PHK12NQ03LT N-channel TrenchMOS™ logic level FET detail 6.2 1.0 0.7 1.05 0.25 0.25 5.8 0.4 0.6 0.244 ...
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... Section 4 “Limiting values” Figure Section 4 “Limiting values” E DS(AL)S Section 5 “Thermal characteristics” Section 5 “Thermal characteristics” Figure 4 Section 6 “Characteristics” Figure 13 Rev. 02 — 02 March 2004 PHK12NQ03LT N-channel TrenchMOS™ logic level FET correction to I value and I conditions and values corrected. ...
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... Trademarks TrenchMOS — Rev. 02 — 02 March 2004 Rev. 02 — 02 March 2004 PHK12NQ03LT PHK12NQ03LT N-channel TrenchMOS™ logic level FET N-channel TrenchMOS™ logic level FET is a trademark of Koninklijke Philips Electronics N.V. Fax: + 24825 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 02 March 2004 Document order number: 9397 750 12955 PHK12NQ03LT N-channel TrenchMOS™ logic level FET ...