PHD71NQ03LT NXP Semiconductors, PHD71NQ03LT Datasheet

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PHD71NQ03LT

Manufacturer Part Number
PHD71NQ03LT
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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PHD71NQ03LT
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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
Table 1.
Symbol Parameter
V
I
P
Dynamic characteristics
Q
Static characteristics
R
D
DS
tot
DSon
GD
Simple gate drive required due to low
gate charge
DC-to-DC convertors
PHD71NQ03LT
N-channel TrenchMOS logic level FET
Rev. 02 — 9 March 2010
drain-source voltage
drain current
total power dissipation T
gate-drain charge
drain-source on-state
resistance
Quick reference
Conditions
T
T
see
V
V
see
V
T
j
mb
mb
j
GS
DS
GS
≥ 25 °C; T
= 25 °C; see
Figure 1
Figure 11
= 25 °C; V
= 25 °C; see
= 5 V; I
= 15 V; T
= 10 V; I
D
j
D
and
≤ 175 °C
= 50 A;
j
= 25 °C;
GS
= 25 A;
Figure 9
Figure 2
3
= 10 V;
Suitable for logic level gate drive
sources
Switched-mode power supplies
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
4.6
8
Max
30
75
120
-
10
Unit
V
A
W
nC
mΩ

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PHD71NQ03LT Summary of contents

Page 1

... PHD71NQ03LT N-channel TrenchMOS logic level FET Rev. 02 — 9 March 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...

Page 2

... Figure 2 mb pulsed; δ ≤ 50 µ °C mb ≤ 10 µs; pulsed ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 March 2010 PHD71NQ03LT N-channel TrenchMOS logic level FET Graphic symbol Min - - -20 Figure 1 - and 3 - ...

Page 3

... Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 March 2010 PHD71NQ03LT N-channel TrenchMOS logic level FET 120 P der (%) 100 Normalized total power dissipation as a function of mounting base temperature 03ai76 = 10 μ ...

Page 4

... PHD71NQ03LT_2 Product data sheet Conditions see Figure 4 mounted on a printed-circuit board; minimum footprint single pulse −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 March 2010 PHD71NQ03LT N-channel TrenchMOS logic level FET Min Typ Max - - 1. 03ai75 t p δ = ...

Page 5

... °C; see /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 March 2010 PHD71NQ03LT N-channel TrenchMOS logic level FET Min Typ Figure 8 0.6 - Figure Figure 8 1 1.9 - ...

Page 6

... 0.6 0 (V) DS Fig 6. 03ai28 typ max 2.4 3.2 V (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 March 2010 PHD71NQ03LT N-channel TrenchMOS logic level FET 80 × > DSon 175 °C = ° ...

Page 7

... Fig 10. Normalized drain-source on-state resistance 03ai82 (nC) G Fig 12. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 March 2010 PHD71NQ03LT N-channel TrenchMOS logic level FET 2 a 1.5 1 0 factor as a function of junction temperature ...

Page 8

... PHD71NQ03LT_2 Product data sheet ( 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 March 2010 PHD71NQ03LT N-channel TrenchMOS logic level FET 03ai80 = 25 ° 0.9 1.2 V (V) SD © NXP B.V. 2010. All rights reserved ...

Page 9

... min min 5.46 0.56 6.22 6.73 4.0 4.45 5.00 0.20 5.98 6.47 REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 March 2010 PHD71NQ03LT N-channel TrenchMOS logic level FET min 10.4 2.95 2.285 4.57 0.5 9.6 2.55 EUROPEAN PROJECTION SOT428 ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number PHD71NQ03LT separated from data sheet PHP_PHB_PHD71NQ03LT-01. Product data All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 March 2010 ...

Page 11

... All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 March 2010 PHD71NQ03LT N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...

Page 12

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 March 2010 PHD71NQ03LT N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2010. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PHD71NQ03LT_2 All rights reserved. Date of release: 9 March 2010 ...

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