PHB27NQ10T NXP Semiconductors, PHB27NQ10T Datasheet - Page 3

• Manufacturer Part Number: PHB27NQ10T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PHB27NQ10T
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
I
D
DM
S
SM
AS
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
P
(%)
der
100
80
60
40
20
0
function of mounting base temperature
Normalized total power dissipation as a
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
non-repetitive avalanche
current
50
100
150
All information provided in this document is subject to legal disclaimers.
T
014aab237
mb
(°C)
Rev. 02 — 17 December 2010
200
Conditions
T
T
V
V
pulsed; T
T
T
pulsed; T
V
V
V
R
j
j
mb
mb
GS
GS
GS
sup
sup
GS
≥ 25 °C; T
≥ 25 °C; T
= 25 °C
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
= 50 Ω; unclamped
≤ 25 V; unclamped; t
≤ 25 V; V
mb
mb
= 25 °C
= 25 °C
j
j
Fig 2.
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
GS
= 100 °C
= 25 °C
= 10 V; T
(%)
= 25 °C; I
I
D
100
80
60
40
20
0
function of mounting base temperature
Normalized continuous drain current as a
0
N-channel TrenchMOS standard level FET
GS
p
j(init)
= 100 µs
D
= 20 kΩ
= 20 A;
= 25 °C;
50
100
PHB27NQ10T
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2010. All rights reserved.
T
014aab238
mb
175
175
Max
100
100
20
20
28
112
107
28
112
128
28
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
A
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