PHB20NQ20T NXP Semiconductors, PHB20NQ20T Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PHB20NQ20T

Manufacturer Part Number
PHB20NQ20T
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
Table 1.
Symbol
V
I
P
Static characteristics
R
Dynamic characteristics
Q
D
DS
tot
DSon
GD
PHB20NQ20T
N-channel TrenchMOS standard level FET
Rev. 02 — 16 December 2010
Higher operating power due to low
thermal resistance
Low conduction losses due to low
on-state resistance
DC-to-DC converters
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
gate-drain charge
Conditions
T
T
T
V
T
V
V
j
mb
mb
j
GS
GS
DS
≥ 25 °C; T
= 25 °C
= 25 °C; V
= 25 °C
= 10 V; I
= 10 V; I
= 160 V; T
j
D
D
≤ 175 °C
Suitable for high frequency
applications due to fast switching
characteristics
General purpose switching
GS
= 10 A;
= 20 A;
j
= 25 °C
= 10 V
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
120
22
Max Unit
200
20
150
130
-
V
A
W
mΩ
nC

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PHB20NQ20T Summary of contents

Page 1

... PHB20NQ20T N-channel TrenchMOS standard level FET Rev. 02 — 16 December 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...

Page 2

... V; unclamped sup = 50 Ω ≤ sup Ω; unclamped R GS All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHB20NQ20T Graphic symbol mbb076 3 Version SOT404 Min Max - 200 = 20 kΩ - 200 ...

Page 3

... V (V) DS Fig 4. All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHB20NQ20T N-channel TrenchMOS standard level FET 100 150 Normalized continuous drain current as a function of mounting base temperature 2 10 prior to avalanche = 150 ° ...

Page 4

... P 0.05 0.02 −2 10 single pulse −3 10 −6 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHB20NQ20T N-channel TrenchMOS standard level FET Min Typ - - - 50 003aaf099 t p δ −2 − (s) ...

Page 5

... ° /dt = -100 A/µ - All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHB20NQ20T Min Typ Max = -55 °C 178 - - °C 200 - - ° ...

Page 6

... (V) GS Fig 9. 003aaf104 V 100 180 T (°C) j Fig 11. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHB20NQ20T N-channel TrenchMOS standard level FET 0.3 4.6 V 4.8 V DS(on) 4 (Ω) 0.2 5 ° ...

Page 7

... Fig 13. Input, output and reverse transfer capacitances 003aaf108 = 160 (nC) G Fig 15. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHB20NQ20T N-channel TrenchMOS standard level FET (pF − ...

Page 8

... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHB20NQ20T N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2010. All rights reserved. SOT404 05-02-11 06-03- ...

Page 9

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number PHB20NQ20T separated from data sheet PHB_PHP20NQ20T v.1. PHB_PHP20NQ20T v.1 19990801 PHB20NQ20T Product data sheet ...

Page 10

... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHB20NQ20T N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 11

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHB20NQ20T N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2010. All rights reserved ...

Page 12

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 16 December 2010 Document identifier: PHB20NQ20T ...

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