NX3008PBKW NXP Semiconductors, NX3008PBKW Datasheet
NX3008PBKW
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NX3008PBKW Summary of contents
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... NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET Rev. 1 — 1 August 2011 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Low threshold voltage ...
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... Simplified outline SOT323 (SC-70) Description plastic surface-mounted package; 3 leads Marking code AB% All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET Graphic symbol 017aaa259 Version SOT323 [1] © NXP B.V. 2011. All rights reserved. ...
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... °C; single pulse; t amb °C amb ° °C amb HBM All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET Min Max - - [1] - -200 [1] - -130 ≤ 10 µ ...
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... Product data sheet 001aao121 75 125 175 T (°C) j Fig drain mounting pad All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET 120 I der (%) -75 - Normalized continuous drain current as a function of junction temperature ...
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... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values NX3008PBKW Product data sheet Conditions in free air − − All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET Min Typ Max [1] - 415 480 [2] - 350 400 - ...
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... - -4 Ω °C G(ext -200 mA ° All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET Min Typ Max - -0.6 -0 ...
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... (V) DS Fig 7. 001aao258 R (4) (5) (6) -0.15 -0.20 -0.25 I (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET -3 - (A) (1) (2) -4 -10 -5 -10 -6 -10 0.0 -0.5 -1 ° (1) minimum values ...
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... Fig 11. Normalized drain-source on-state resistance as 001aao262 10 C (pF) 120 180 T (˚C) j Fig 13. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET - 120 a function of junction temperature; typical values 2 (1) 10 (2) (3) ...
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... Q (nC °C amb Fig 15. Gate charge waveform definitions -0. (A) -0.20 -0.15 (1) -0.10 -0.05 0.00 0.0 -0.4 -0.8 All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) 001aao265 (2) -1.2 ...
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... NX3008PBKW Product data sheet duty cycle δ 006aaa812 All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC JEITA SC-70 All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET detail 0.45 0.23 0.2 0.2 0.15 0.13 EUROPEAN PROJECTION SOT323 ...
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... All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET solder lands solder resist solder paste occupied area Dimensions in mm sot323_fr solder lands solder resist occupied area 1.8 Dimensions in mm ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date NX3008PBKW v.1 20110801 NX3008PBKW Product data sheet Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 1 August 2011 Document identifier: NX3008PBKW ...