BSS84AKS NXP Semiconductors, BSS84AKS Datasheet - Page 4

• Manufacturer Part Number: BSS84AKS
• Description: Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BSS84AKS
Product data sheet
Fig 1.
Fig 3.
P
(%)
(A)
-10
-10
-10
I
der
D
120
80
40
-1
-1
-2
-3
0
-10
-75
function of junction temperature
voltage
Normalized total power dissipation as a
I
(1) t
(2) t
(3) t
(4) DC; T
(5) t
(6) DC; T
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
DM
-1
is single pulse
p
p
p
p
= 100 μs
= 1 ms
= 10 ms
= 100 ms
-25
sp
amb
= 25 °C
= 25 °C; drain mounting pad 1 cm
25
75
125
All information provided in this document is subject to legal disclaimers.
001aao121
-1
T
j
(°C)
175
Rev. 1 — 23 May 2011
2
Fig 2.
(%)
I
der
120
80
40
50 V, 160 mA dual P-channel Trench MOSFET
0
-75
function of junction temperature
Normalized continuous drain current as a
-10
-25
25
V
DS
75
(V)
BSS84AKS
125
© NXP B.V. 2011. All rights reserved.
(1)
(2)
(3)
(4)
(5)
(6)
001aao122
001aao139
T
j
(°C)
-10
175
2
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