BSS84AK NXP Semiconductors, BSS84AK Datasheet - Page 10
![P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology](/photos/41/52/415233/sot023_3d_sml.gif)
BSS84AK
Manufacturer Part Number
BSS84AK
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet
1.BSS84AK.pdf
(16 pages)
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NXP Semiconductors
8. Test information
BSS84AK
Product data sheet
Fig 17. Duty cycle definition
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
All information provided in this document is subject to legal disclaimers.
P
Rev. 1 — 23 May 2011
t
1
t
2
duty cycle δ =
006aaa812
t
t
t
1
2
50 V, 180 mA P-channel Trench MOSFET
BSS84AK
© NXP B.V. 2011. All rights reserved.
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